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| DSEP 60-03A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 60 A VRRM = 300 V trr = 30 ns A C VRSM V 300 VRRM V 300 Type TO-247 AD DSEP 60-03A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 110C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 3.5 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 60 700 1.6 0.4 -55...+175 175 -55...+150 A A A mJ A C C C W Nm g Applications q Features q q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25C mounting torque typical 230 0.8...1.2 6 q q q Symbol IR x Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 60 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 650 2.5 1.25 1.71 0.65 0.25 mA mA V V K/W K/W ns 4.8 A q VF y RthJC RthCH trr IRM q q q Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders IF = 1 A; -di/dt = 300 A/ms; VR = 30 V; TVJ = 25C VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms TVJ = 100C 30 Advantages q q q Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Dimensions see outlines.pdf (c) 2000 IXYS All rights reserved 1-2 008 IXYS reserves the right to change limits, test conditions and dimensions. DSEP 60-03A 160 A IF 120 TVJ=150C TVJ=100C 80 TVJ= 25C Qr 800 TVJ = 100C nC 600 IF = 120A IF = 60A IF = 30A VR = 150V IRM 25 A 20 TVJ = 100C VR = 150V IF = 120A IF = 60A IF = 30A 15 400 10 40 200 5 0 0.0 0.5 1.0 1.5 V VF 2.0 0 100 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 90 ns Fig. 3 Peak reverse current IRM versus -diF/dt 14 V 12 VFR 10 tfr VFR TVJ = 100C IF = 60A 0.85 s 0.80 tfr 0.75 1.4 TVJ = 100C VR = 150V 1.2 Kf 1.0 IRM trr 80 70 Qr 60 0.8 IF = 120A IF = 60A IF = 30A 8 0.70 0.6 6 0.65 0.4 0 40 80 120 C 160 TVJ 50 0 200 400 600 -diF/dt 800 A/ms 1000 4 0 200 400 0.60 600 A/ms 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W 0.1 ZthJC 0.01 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.324 0.125 0.201 ti (s) 0.005 0.0003 0.038 0.001 0.0001 0.00001 DSEP 60-03A 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case 008 NOTE: Fig. 2 to Fig. 6 shows typical values (c) 2000 IXYS All rights reserved 2-2 |
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